darlington transistor npn silicon maximum ratings rating symbol mpsa27 unit collectoremitter voltage v ces 60 vdc emitterbase voltage v ebo 10 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 100 m adc, v be = 0) v (br)ces 60 e e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 60 e e vdc collector cutoff current (v cb = 30 v, i e = 0) (v cb = 40 v, i e = 0) (v cb = 50 v, i e = 0) i cbo e e 100 nadc collector cutoff current (v ce = 30 v, v be = 0) (v ce = 40 v, v be = 0) (v ce = 50 v, v be = 0) i ces e e 500 nadc emitter cutoff current (v eb = 10 vdc) i ebo e e 100 nadc on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mpsa27/d mpsa27 case 2911, style 1 to92 (to226aa) 1 2 3 collector 3 base 2 emitter 1
mpsa27 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (1) dc current gain (i c = 10 ma, v ce = 5.0 v) (i c = 100 ma, v ce = 5.0 v) h fe 10,000 10,000 e e e e e collectoremitter saturation voltage (i c = 100 ma, i b = 0.1 madc) v ce(sat) e e 1.5 vdc baseemitter on voltage (i c = 100 ma, v ce = 5.0 vdc) v be(on) e e 2.0 vdc smallsignal characteristics small signal current gain (i c = 10 ma, v ce = 5.0 v, f = 100 mhz) h fe 1.25 2.4 e e 1. pulse test: pulse width 300 s, duty cycle 2.0%.
mpsa27 http://onsemi.com 3 figure 1. dc current gain figure 2. aono voltages figure 3. collector saturation region figure 4. high frequency current gain figure 5. active region e safe operating area 100 1 k 1.0 i c , collector current (ma) 120 100 80 60 i c , collector current (ma) 100 1 k 1.0 1.4 1.0 0.8 0.6 100 500 1.0 i b , base current ( a) 1.1 1.0 0.9 0.8 0.7 i c , collector current (ma) 1.0 0.5 1.0 2.0 0.8 0.6 0.4 0.2 2.0 200 2.0 10 1.0 v ce , collector-emitter voltage (volts) 1 k 200 100 50 20 10 4.0 v ce = 5.0 v h fe , dc current gain (k) v, voltage (volts) v h , small-signal current gain 40 20 0 10 2.0 3.0 20 30 200 500 t a = 125 c t a = 25 c t a = -55 c 200 500 2.0 10 20 1.2 1.6 t a = 25 c v be(s) @ i c /i b = 1.0 k v ce(s) @ i c /i b = 1.0 k v be(on) @ v ce = 5.0 v 2.0 5.0 10 20 50 10 20 100 200 , collector current (ma) i c 20 50 500 1.0 ms 1.0 s t a = 25 c current limit thermal limit second breakdown limit 100 s t c = 25 c t a = 25 c i c = 10 ma i c = 100 ma i c = 250 ma i c = 500 ma 1 k 0.1 0.2 0.5 1.3 1.2 1.4 1.6 1.5 , collector-emitter voltage (volts) ce 4.0 5.0 500 50 v ce = 5.0 v f = 100 mhz t a = 25 c 6.0 40 60 3.0 30 fe
mpsa27 http://onsemi.com 4 package dimensions case 02911 (to226aa) issue ad c r n n 1 j section xx d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.021 0.457 0.533 f 0.016 0.019 0.407 0.482 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- style 1: pin 1. emitter 2. base 3. collector on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mpsa27/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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